MX80B03PZ1A Overview
The MX80B03PZ1A is a high-performance semiconductor device designed for industrial and automotive applications requiring robust operation and precise control. Engineered with a focus on integration and efficiency, this component offers reliable switching capabilities and optimized thermal management. Its compact package supports streamlined PCB layouts, while maintaining strong electrical characteristics under various environmental conditions. Ideal for engineers and sourcing specialists, the MX80B03PZ1A delivers consistent performance in power management systems, ensuring improved system stability and longevity. For detailed specifications and purchasing options, visit Fabricante de CI.
MX80B03PZ1A Technical Specifications
| Parâmetro | Especificação |
|---|---|
| Device Type | Power MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 80 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| Resistência de ligação (RDS(on)) | 3.2 m?? @ 4.5 V |
| Total Gate Charge (Qg) | 40 nC |
| Gama de temperaturas de funcionamento | -55??C to +175??C |
| Tipo de embalagem | PowerPak SO-8 |
| Maximum Power Dissipation | 150 W |
MX80B03PZ1A Key Features
- Low On-Resistance: Minimizes conduction losses, improving power efficiency and reducing heat generation in high-current applications.
- High Current Capability: Supports continuous drain currents up to 80 A, allowing for demanding load driving without compromising reliability.
- Robust Thermal Performance: The PowerPak SO-8 package enhances heat dissipation, ensuring stable operation under elevated temperature conditions.
- Fast Switching Speed: Total gate charge is optimized for rapid transitions, enabling higher frequency operation in switching power supplies and motor drives.
MX80B03PZ1A Advantages vs Typical Alternatives
This device offers superior conduction efficiency with its low on-resistance and high current handling compared to typical MOSFETs in the same voltage class. The compact PowerPak SO-8 package contributes to better thermal management and space savings on the PCB. Its optimized gate charge improves switching speed, reducing power losses and increasing overall system reliability in industrial and automotive environments.
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Aplicações típicas
- Power management modules in industrial automation systems requiring efficient load switching and thermal resilience.
- Automotive electronic control units (ECUs) that demand high current capacity with reliable thermal performance.
- DC-DC converters where fast switching and low conduction losses are critical for energy savings.
- Motor driver circuits in robotics and factory automation applications, benefiting from the device??s robust switching characteristics.
MX80B03PZ1A Brand Info
The MX80B03PZ1A is part of a semiconductor portfolio crafted by a leading manufacturer specializing in power MOSFETs for industrial and automotive sectors. This product line emphasizes durability, efficiency, and integration, supporting engineers in designing reliable power electronics solutions. The brand is known for rigorous quality control and innovation in semiconductor packaging and device performance, making this MOSFET a trusted choice for demanding environments.
FAQ
What is the maximum voltage rating for MX80B03PZ1A?
The device is rated for a maximum drain-source voltage of 30 V, making it suitable for low-voltage power switching applications where this voltage threshold is required.
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How does the MX80B03PZ1A??s on-resistance impact system efficiency?
With an on-resistance as low as 3.2 m?? at a gate voltage of 4.5 V, the MOSFET reduces conduction losses significantly. This improves overall system efficiency by minimizing power dissipation during operation, which also lessens thermal stress on the device.
Can the MX80B03PZ1A operate at high temperatures?
Yes, the device supports an operating temperature range from -55??C to +175??C. This wide