2N1613-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by Fairchild

  • This transistor amplifies electrical signals, enabling precise control in electronic circuits.
  • Its voltage rating supports stable operation, ensuring consistent performance under various conditions.
  • The compact package design allows efficient use of board space in dense circuit layouts.
  • Ideal for switching applications, it improves response time and energy efficiency in digital devices.
  • Manufactured to meet industry standards, it provides dependable operation throughout its service life.
Логотип компании Microchip Technology
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2N1613-Transistor Overview

The 2N1613 transistor is a silicon NPN bipolar junction transistor designed for low-power amplifier and switching applications. Offering reliable performance with a maximum collector current of 500mA and a collector-emitter voltage rating up to 40V, it is suitable for various industrial and consumer electronic circuits. Its robust design ensures stable operation in moderate frequency ranges, making it an effective choice for signal amplification and switching tasks. This device is widely used by engineers and sourcing specialists looking for an efficient transistor solution. For detailed technical support and supply, visit Производитель ИС.

2N1613-Transistor Technical Specifications

ПараметрЗначениеЕдиница
Тип транзистораNPN Bipolar Junction
Напряжение коллектор-эмиттер (VГЕНЕРАЛЬНЫЙ ДИРЕКТОР)40V
Collector-Base Voltage (VCBO)60V
Emitter-Base Voltage (VEBO)7V
Коллекторный ток (IC)500мА
Рассеиваемая мощность (Ptot)625мВт
Частота перехода (fT)80МГц
Усиление постоянного тока (hFE)50 to 300
Тип упаковкиМеталлическая банка TO-18

2N1613-Transistor Key Features

  • High Collector Current Capability: Supports up to 500mA, enabling effective handling of moderate load currents in switching applications.
  • Wide Voltage Ratings: Collector-Emitter voltage of 40V ensures suitability for a range of low to medium voltage circuits.
  • Reliable Gain Performance: DC current gain ranging from 50 to 300 provides flexibility in amplification tasks, ensuring stable signal processing.
  • Metal Can Package: The TO-18 hermetically sealed package offers enhanced durability and thermal stability for industrial environments.

Типовые применения

  • Low-noise audio amplifiers where signal fidelity and moderate power handling are required for clear sound reproduction.
  • Switching circuits in control systems that require reliable transistor switching at moderate voltages and currents.
  • Signal amplification stages in instrumentation and sensing devices, benefiting from the transistor??s gain and frequency characteristics.
  • General-purpose amplification and switching in consumer electronics, offering cost-effective performance for mass-produced devices.

2N1613-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage rating, current capacity, and gain, making it advantageous over some low-power alternatives. Its metal can package enhances thermal dissipation and environmental protection compared to plastic-encapsulated transistors. With a broad gain range and moderate frequency response, it delivers reliable amplification and switching performance for industrial and consumer applications, ensuring longevity and consistent operation under typical working conditions.

2N1613-Transistor Brand Info

The 2N1613 transistor is a classic semiconductor device originally standardized under JEDEC, widely produced by multiple manufacturers including Texas Instruments, ON Semiconductor, and NXP Semiconductors. These producers maintain rigorous manufacturing standards ensuring consistent electrical performance and reliability. Sourced from established brands, this transistor benefits from a mature design and broad industry acceptance, making it a dependable choice for engineers and sourcing specialists needing a proven NPN transistor for general-purpose electronic circuits.

ЧАСТО ЗАДАВАЕМЫЕ ВОПРОСЫ

Каков максимальный ток коллектора этого транзистора?

The maximum collector current for this device is 500 milliamps (mA). This

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