1N5822RL Schottky Diode 3A 40V DO-201AD Package – Vishay Semiconductor

  • Provides efficient rectification of high-current AC signals, reducing power loss in circuits.
  • Features a low forward voltage drop, improving overall energy efficiency during conduction.
  • Encased in a compact package, enabling board-space savings in dense electronic assemblies.
  • Ideal for use in power supplies and voltage regulation, ensuring stable output under varying loads.
  • Designed for long-term reliability, sustaining performance in demanding thermal and electrical conditions.
模拟器件公司 - 徽标
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1N5822RL Overview

The 1N5822RL is a robust Schottky barrier rectifier diode designed for efficient power rectification and voltage clamping in demanding industrial electronics. Featuring a low forward voltage drop and high surge current capability, it enables improved energy efficiency and thermal performance in power supply circuits. Its rugged design ensures reliability in high-frequency switching and rectification applications, making it a preferred choice for engineers seeking durable and high-performance diode solutions. For trusted sourcing and detailed technical support, visit 集成电路制造商.

1N5822RL Technical Specifications

参数价值单位
Maximum Repetitive Peak Reverse Voltage (VRRM)40V
Maximum Average Forward Current (IF(AV))3A
Forward Voltage Drop (VF) at IF = 3A0.525 (typical)V
Surge Forward Current (IFSM)80A
Maximum Reverse Current (IR) at VR = 40V1毫安
Operating Junction Temperature Range (TJ)-65 to +125??C
Storage Temperature Range (TSTG)-65 to +150??C
包装类型DO-201AD (Axial)

1N5822RL Key Features

  • Low Forward Voltage Drop: Minimizes power loss during conduction, enhancing overall circuit efficiency and reducing thermal stress.
  • High Surge Current Capability: Supports transient current spikes up to 80A, improving circuit protection and reliability under load surges.
  • Fast Switching Performance: Ideal for high-frequency rectification in switching power supplies, enabling precise and efficient power conversion.
  • 工作温度范围广: Ensures stable performance in harsh industrial environments, from -65??C to +125??C junction temperature.

典型应用

  • Power supply rectification in industrial converters, where efficient energy conversion and low heat dissipation are critical for system reliability.
  • Voltage clamping in DC/DC converters to protect sensitive components from voltage spikes and transient surges.
  • Polarity protection in battery-powered equipment, ensuring devices operate safely by preventing damage from accidental reverse polarity connections.
  • Freewheeling diode in motor drive circuits, supporting smooth current flow during switching operations and enhancing motor control stability.

1N5822RL Advantages vs Typical Alternatives

This Schottky diode offers significant advantages over standard rectifier diodes by providing a substantially lower forward voltage drop, which reduces power dissipation and improves efficiency. Its high surge current rating and fast switching capabilities further enhance circuit protection and performance. Compared to typical silicon diodes, it provides superior reliability and thermal management in demanding industrial environments, making it a preferred solution for power-sensitive applications.

1N5822RL Brand Info

The 1N5822RL is widely available from multiple reputable semiconductor manufacturers specializing in discrete power components. It is commonly branded by leading IC manufacturers known for high-quality Schottky diodes and power rectifiers, ensuring consistent performance and reliability. The device is manufactured under strict quality controls to meet industrial standards, providing engineers with a dependable component for power management and rectification needs.

常见问题

What is the maximum repetitive peak reverse voltage for the 1N5822RL?

The maximum repetitive peak reverse voltage (VRRM) for this device is 40 volts, meaning it can withstand reverse voltages up to this level repeatedly without damage, which is suitable for many low-voltage power applications.

How does the forward voltage drop impact circuit efficiency?

The forward voltage drop is typically around 0.525V at 3A, which is relatively low. This low voltage drop reduces

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