2N918-Transistor by ON Semiconductor | High-Speed Switching NPN Transistor | TO-18 Package

  • This transistor amplifies weak electrical signals, enabling improved circuit performance and signal processing.
  • A high transition frequency allows for faster switching speeds, essential in high-frequency applications.
  • The compact package reduces board space, making it suitable for densely packed electronic designs.
  • Ideal for use in RF amplifiers or oscillators, enhancing signal clarity and stability in communication devices.
  • Manufactured under strict quality controls to ensure consistent operation and long-term reliability in various environments.
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2N918-Transistor Overview

The 2N918 transistor is a high-speed, low-power NPN bipolar junction transistor ideal for switching and amplification applications. Designed to operate efficiently at high frequencies, it features a maximum collector current of 100 mA and a collector-emitter voltage rating of 30 V. This transistor is commonly used in RF circuits and general-purpose amplification tasks where fast switching and reliable performance are essential. Its small signal handling capability and low noise characteristics make it a preferred choice for engineers seeking dependable semiconductor solutions. For detailed sourcing and technical assistance, visit 集成电路制造商.

2N918-Transistor Key Features

  • High-frequency operation: Supports switching speeds suitable for RF applications, enhancing signal integrity in communication circuits.
  • Low collector-emitter saturation voltage: Improves efficiency by reducing power loss during conduction, critical for power-sensitive designs.
  • Reliable current amplification: Offers a consistent DC current gain (hFE) range, ensuring stable performance across operating conditions.
  • Compact TO-18 metal can package: Facilitates easy integration into compact circuit boards, enabling space-saving designs without compromising thermal dissipation.

2N918-Transistor Technical Specifications

参数价值
类型NPN 双极结型晶体管
集电极-发射极电压 (VCEO)30 V
集电极电流 (IC)100 mA maximum
Power Dissipation (Ptot)400 mW
转换频率 (fT)250 MHz typical
直流电流增益 (hFE)40 to 300
集电极-基极电压 (VCBO)30 V
发射极-基极电压 (VEBO)5 V
包装类型TO-18 金属罐
工作温度范围摄氏 -65 度至 +200 度

2N918-Transistor Advantages vs Typical Alternatives

The 2N918 transistor delivers superior switching speed and frequency response compared to many general-purpose transistors. Its low saturation voltage and high transition frequency offer enhanced efficiency and signal fidelity in RF and switching circuits. Additionally, its robust packaging and wide operating temperature range improve reliability under demanding industrial conditions, making it a preferred choice over alternatives with lower frequency capabilities or less stable gain characteristics.

典型应用

  • High-frequency oscillator circuits where fast switching and stable gain are critical for signal generation and frequency stability.
  • RF amplifier stages in communication devices requiring linear amplification with minimal signal distortion.
  • Switching circuits in digital logic and pulse circuits benefitting from low saturation voltage for reduced power dissipation.
  • General-purpose small-signal amplification in sensor interfaces and instrumentation electronics.

2N918-Transistor Brand Info

The 2N918 transistor has been a reliable semiconductor component in the industry for decades, produced under stringent quality standards by multiple manufacturers. Known for its consistent performance and availability, this device caters to engineers and sourcing specialists needing a trusted NPN transistor for RF and switching applications. Its long-standing presence in the market is supported by comprehensive datasheets and technical support from established semiconductor suppliers, ensuring dependable integration into industrial and commercial electronic systems.

常见问题

What is the maximum collector current rating of the 2N918 transistor?

The transistor supports a maximum collector current of 100 mA, making it suitable for low to moderate power amplification and switching tasks in various circuits.

Can the 2N918 be used in high-frequency applications?

Yes, with a typical transition frequency (fT) of 250 MHz, this transistor is well-suited for RF applications and high-speed switching circuits.

What package type does the 2N918 transistor come in?

This device is provided in a TO-18 metal can package, which offers good thermal conductivity and mechanical durability for industrial applications.

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What is the typical DC current gain (hFE) range for this transistor?

The DC current gain ranges from 40 to 300, ensuring stable amplification performance across its specified operating conditions.

What is the recommended operating temperature range for the 2N918 transistor?

The transistor operates reliably across a wide temperature range from -65??C to +200??C, making it suitable for harsh environmental conditions.

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