CY62256NLL-55ZXAKJ 32K x 8 SRAM Memory IC – 28-Pin SOJ Package

  • This device provides fast, low-power static RAM, enabling efficient data storage and retrieval in embedded systems.
  • Operates at a 55ns access time, ensuring quick response crucial for high-speed computing applications.
  • The compact 28-pin DIP package reduces board space, simplifying integration into existing hardware designs.
  • Ideal for use in memory buffering tasks, where stable and rapid data access improves overall system performance.
  • Manufactured with stringent quality controls to maintain consistent operation and long-term reliability under varied conditions.
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CY62256NLL-55ZXAKJ Overview

The CY62256NLL-55ZXAKJ is a high-performance 32K x 8-bit static RAM (SRAM) device designed for fast, reliable data storage in industrial and embedded applications. Featuring a 55ns access time and low power consumption, it supports seamless operation in systems requiring quick memory read/write cycles. The non-volatile characteristics of this device ensure data retention during power interruptions, enhancing system stability. Its standard 28-pin SOJ package facilitates straightforward integration into existing designs. Engineers and sourcing specialists will find this memory solution ideal for applications demanding robust performance and dependable data integrity. More details are available at 集成电路制造商.

CY62256NLL-55ZXAKJ Technical Specifications

参数规格
内存大小32K x 8 bits (256 Kbits)
访问时间55 ns
工作电压5 V ??10%
Data Retention Voltage2 V minimum
包装类型28-pin SOJ
工作温度范围0??C to 70??C
Input/Output TypeTTL compatible
待机电流5 mA max
运行电流100 mA max
Data Retention Current150 ??A max

CY62256NLL-55ZXAKJ Key Features

  • Fast 55ns access time: Enables rapid data retrieval, enhancing system throughput and reducing latency in time-critical applications.
  • 低功耗: Supports both active and standby modes with minimal current draw, extending battery life and reducing thermal load in embedded systems.
  • Non-volatile data retention: Maintains stored data reliably during power-down conditions at voltages as low as 2 V, ensuring data integrity in critical applications.
  • TTL compatible inputs and outputs: Facilitates easy interfacing with standard digital logic circuits without additional level shifting.
  • Industry-standard 28-pin SOJ package: Simplifies PCB layout and allows easy replacement or upgrade in legacy systems.

CY62256NLL-55ZXAKJ Advantages vs Typical Alternatives

This SRAM device offers a compelling combination of speed, power efficiency, and data retention compared to typical volatile memories. Its low standby current and robust data retention voltage minimize power requirements while safeguarding stored information during power interruptions. The 55ns access time accelerates data handling beyond many alternatives, making it a superior choice for applications demanding fast and reliable memory access without complex refresh cycles.

典型应用

  • Embedded systems requiring fast and reliable non-volatile memory storage, such as industrial controllers and instrumentation, where quick access and data retention are critical for performance and safety.
  • Cache memory in communication equipment to accelerate data buffering and improve throughput.
  • Data logging devices that benefit from low power standby and reliable memory retention during power cycles.
  • Automotive electronic modules where robust operation over a wide temperature range and power cycling resilience are essential.

CY62256NLL-55ZXAKJ Brand Info

The CY62256NLL-55ZXAKJ is a product from an established semiconductor manufacturer known for delivering high-quality memory solutions tailored for industrial and embedded applications. This SRAM module embodies the brand??s commitment to performance, reliability, and power efficiency, meeting stringent industry standards and providing engineers with a dependable memory component optimized for demanding environments.

常见问题

What is the access time of the CY62256NLL-55ZXAKJ, and why is it important?

The device features a 55ns access time, which defines how quickly data can be read from or written to the memory. This fast access speed is crucial for applications that require rapid data processing and minimal latency, ensuring efficient system performance.

How does the CY62256NLL-55ZXAKJ maintain data during power loss?

This SRAM has a data retention voltage as low as 2 V, allowing it to preserve stored information even when the primary power supply is interrupted or reduced. This feature is essential for maintaining data integrity in

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