DDTA144GUA-7-F Overview
The DDTA144GUA-7-F is a high-performance dual-gate N-channel MOSFET designed for RF amplification applications. This device offers efficient power handling with low noise figure and high gain, making it suitable for use in industrial and communication systems. Its robust electrical characteristics ensure reliable operation under demanding conditions. The compact SOT-89 package supports easy integration into compact circuit designs. Available through 集成电路制造商, this transistor meets stringent standards for quality and consistency, making it an ideal choice for engineers seeking dependable RF amplification components.
DDTA144GUA-7-F Technical Specifications
| 参数 | 规格 |
|---|---|
| 设备类型 | Dual-Gate N-Channel MOSFET |
| 包装 | SOT-89 |
| Operating Frequency Range | Up to 2 GHz |
| Gain (typical) | 14.5 dB at 900 MHz |
| 噪声系数 | 2.2 dB at 900 MHz |
| Drain-Source Voltage (Vds) | 12 V max |
| Gate-Source Voltage (Vgs) | ??6 V max |
| Maximum Drain Current (Id) | 50 mA continuous |
| 功率耗散 | 300 毫瓦 |
| Input Capacitance (Ciss) | 3.5 pF typical |
DDTA144GUA-7-F Key Features
- Dual-gate design: Enables precise gain control and improved linearity in RF amplification circuits, enhancing signal clarity.
- Low noise figure: Reduces signal degradation in sensitive receiver front-ends, ensuring better signal-to-noise ratio.
- High gain at UHF frequencies: Provides efficient amplification up to 2 GHz, suitable for modern wireless applications.
- Compact SOT-89 package: Enables space-saving PCB layouts and simplifies assembly in high-density designs.
- Robust voltage handling: Supports up to 12 V drain-source voltage, ensuring reliable performance in varied operating conditions.
DDTA144GUA-7-F Advantages vs Typical Alternatives
This device offers superior noise performance and gain compared to typical single-gate MOSFETs in its class. Its dual-gate architecture provides enhanced gain control, which improves linearity and reduces distortion in RF amplifier circuits. Additionally, the compact SOT-89 package facilitates easier integration into space-constrained designs, while maintaining robust electrical ratings for dependable operation in industrial environments.
🔥 畅销产品
典型应用
- RF front-end amplification in communication equipment, improving signal strength and sensitivity for cellular and wireless systems.
- Low-noise amplifier stages in industrial sensors and measurement devices requiring precise signal conditioning.
- Intermediate frequency (IF) amplification in radio receivers, enhancing selectivity and fidelity.
- Signal boosting in portable communication devices where space and power efficiency are critical.
DDTA144GUA-7-F Brand Info
The DDTA144GUA-7-F is part of a specialized line of RF transistors offered by a reputable semiconductor manufacturer known for high-quality analog and RF components. This product line emphasizes reliability, high gain, and low noise characteristics, supporting engineers in achieving optimal performance in wireless and industrial electronics. The brand ensures consistent manufacturing standards and comprehensive datasheet support for design engineers and sourcing professionals.
常见问题
What is the maximum operating frequency of this MOSFET?
The device operates effectively up to 2 GHz, making it suitable for a wide range of UHF and lower microwave frequency applications, including cellular and wireless communication systems.
🌟 特色产品
How does the dual-gate structure benefit circuit design?
The dual-gate configuration allows independent control of gain and input impedance, which improves linearity and reduces distortion. This results in better signal integrity and enhanced performance in RF amplifier stages.
What package type does this transistor use, and why is it beneficial?
The transistor is housed in a compact SOT-89 package, which offers a small footprint that facilitates high-density PCB layouts. This package also provides good thermal performance for the power rating specified.
