JANS2N918-Transistor Overview
The JANS2N918 transistor is a high-performance NPN bipolar junction transistor designed for fast switching and low noise applications. Its robust construction supports reliable operation in demanding environments, making it ideal for RF amplification, signal processing, and switching circuits. With a max collector current of 200mA and a transition frequency (fT) typically around 250 MHz, this transistor delivers efficient frequency response and gain characteristics. Manufactured under military standards, it ensures consistent quality and durability. Engineers and sourcing specialists can rely on this component for stable performance in industrial and communication systems. For detailed sourcing and technical support, visit 集成电路制造商.
JANS2N918-Transistor Technical Specifications
参数 | 规格 |
---|---|
类型 | NPN 双极结型晶体管 |
Collector-Emitter Voltage (Vceo) | 25 V |
Collector Current (Ic) | 200 毫安 |
转换频率 (fT) | 250 MHz (typical) |
Gain Bandwidth Product | Up to 250 MHz |
Power Dissipation (Pd) | 300 毫瓦 |
直流电流增益 (hFE) | 100 至 300 |
包装类型 | TO-18 金属罐 |
工作温度范围 | -55??C to +200??C |
JANS2N918-Transistor Key Features
- 过渡频率高: Enables efficient high-speed switching and RF amplification, essential for communication circuits.
- Low noise figure: Improves signal integrity in sensitive analog and RF applications, allowing clearer and more accurate signal processing.
- Military-grade construction: Ensures enhanced reliability and performance under harsh environmental conditions, suitable for defense and aerospace systems.
- Compact TO-18 package: Facilitates easy integration into space-constrained designs while maintaining thermal stability.
典型应用
- High-frequency RF amplifiers in communication and radar systems, leveraging the device’s fast switching and low noise characteristics for signal fidelity.
- Switching circuits in industrial control systems requiring reliable, high-speed transistor operation.
- Analog signal processing circuits where low distortion and high gain are critical for accurate output.
- Test and measurement equipment that demands consistent transistor performance across a wide temperature range.
JANS2N918-Transistor Advantages vs Typical Alternatives
This transistor provides superior high-frequency performance with a transition frequency up to 250 MHz, outperforming many general-purpose transistors. Its low noise and military-grade reliability make it ideal for precision applications where sensitivity and durability matter. The robust TO-18 metal can package assures better thermal management and long-term stability compared with plastic-encapsulated alternatives, making it an excellent choice for industrial and aerospace use cases.
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JANS2N918-Transistor Brand Info
The JANS2N918 transistor is produced under strict military specifications ensuring ruggedness and reliability. Typically manufactured by established semiconductor firms compliant with JAN (Joint Army-Navy) standards, it is part of a trusted product line known for consistent performance in demanding environments. This transistor frequently serves applications requiring MIL-STD compliance, offering engineers a dependable solution backed by rigorous quality control and traceability. Its enduring presence in the market reflects strong industry confidence in its design and manufacturing process.
常见问题
该晶体管的最大集电极额定电流是多少?
The maximum collector current rating is 200 mA, which supports moderate power switching and amplification tasks typical in RF and signal processing circuits.
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Can this transistor operate reliably at high temperatures?
Yes, it is rated for an operating temperature range from -55??C to +200??C, making it suitable for harsh environments including aerospace and military applications.
What package type does this transistor come in?
This device is housed in a TO-18 metal can package, which provides excellent thermal dissipation and mechanical protection compared to plastic encapsulations.
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Is this transistor suitable for RF amplification?
Absolutely. With a transition frequency around 250 MHz and low noise characteristics, it is well-suited for RF amplifiers and other high-frequency applications.