MSR2N2222AUB/TR Overview
The MSR2N2222AUB/TR is a high-performance NPN bipolar junction transistor designed for general-purpose switching and amplification applications. Featuring a robust collector current capacity and fast switching speed, it is optimized for industrial environments requiring reliable operation under varying conditions. This transistor offers stable performance with a maximum collector current of 600 mA and a voltage rating suitable for low to medium power circuits. Ideal for engineers and sourcing specialists, this component supports efficient design integration while ensuring long-term durability. For more detailed specifications and purchasing options, visit 集成电路制造商.
MSR2N2222AUB/TR Key Features
- High collector current capacity: Supports up to 600 mA, allowing effective switching and amplification in diverse industrial applications.
- Voltage rating: Collector-emitter voltage rating of 40 V ensures compatibility with a wide range of circuits requiring medium voltage handling.
- 切换速度快 Enables efficient operation in high-frequency switching environments, reducing signal delay and improving system responsiveness.
- Complementary low noise: The device exhibits low noise characteristics, critical for sensitive analog signal amplification.
- Robust package: Encapsulated in a TO-92 package, providing ease of mounting and reliable thermal performance for sustained operation.
- Thermal stability: Maximum junction temperature of 150??C allows operation in elevated temperature industrial settings without performance degradation.
- Consistent gain: Forward current gain (hFE) range supports predictable amplification, facilitating precise circuit design.
MSR2N2222AUB/TR Technical Specifications
参数 | 规格 |
---|---|
集电极-发射极电压 (VCEO) | 40 V |
集电极电流 (IC) | 600 mA |
Collector Dissipation (PC) | 625 毫瓦 |
增益带宽积 (fT) | 300 MHz (typical) |
直流电流增益 (hFE) | 100 至 300 |
发射极-基极电压 (VEBO) | 6 V |
Junction Temperature (Tj) | 150 ??C (max) |
包装类型 | TO-92 |
MSR2N2222AUB/TR Advantages vs Typical Alternatives
This transistor offers a balanced combination of current handling and voltage rating superior to many generic NPN transistors. Its fast switching speed and stable gain make it suitable for precision amplification and switching tasks. Compared to typical alternatives, it ensures improved thermal tolerance and reliable operation in industrial environments, providing engineers with a dependable component for diverse system designs.
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典型应用
- General-purpose switching circuits: Efficiently drives loads such as relays, LEDs, and small motors, making it a versatile choice in industrial control systems.
- Signal amplification: Enhances weak analog signals in sensor interfaces and audio circuits, benefiting from its stable gain and low noise.
- Pulse and waveform generation: Supports timing and oscillator circuits due to its fast switching characteristics.
- Driver stages in interfacing logic circuits with higher power devices, enabling seamless integration across multiple voltage domains.
MSR2N2222AUB/TR Brand Info
The MSR2N2222AUB/TR is part of the MSR series, recognized for reliability and performance in industrial transistor applications. Produced under rigorous quality standards, this device meets stringent testing for electrical parameters and environmental durability. It is designed to deliver consistent results in demanding operational conditions, reflecting the brand??s commitment to supporting engineers with high-quality semiconductor solutions.
常见问题
该晶体管的最大集电极额定电流是多少?
The device supports a maximum continuous collector current of 600 mA, making it suitable for moderate power switching and amplification tasks in various electronic circuits.
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这种晶体管能否在高温下工作?
Yes, the maximum junction temperature is rated at 150??C, allowing the transistor to function reliably in industrial environments that experience elevated temperatures.
What package type is used for this transistor?
It is housed in a TO-92 package, which offers ease of mounting on printed circuit boards and provides sufficient thermal dissipation for typical operating conditions.
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Is the MSR2N2222AUB/TR suitable for high-frequency applications?
With a typical gain bandwidth product of 300 MHz, this transistor supports fast switching and is well-suited for moderately high-frequency applications such as waveform generation and signal processing.
How consistent is the current gain of this transistor?
The DC current gain (hFE) ranges between 100 and 300, providing predictable and stable amplification that helps engineers design accurate and reliable circuits.