SMJ64C16S-55JDM Legacy Hermetic 16K×8 CMOS Static RAM (SRAM) Overview
The SMJ64C16S-55JDM from Texas Instruments is a high-reliability 16K×8 static random-access memory (SRAM) engineered for legacy industrial, aerospace, and defense systems. Part of TI’s trusted portfolio of hermetic memory components, it provides fast temporary data storage with no power refresh needed—ideal for applications where environmental resilience and legacy compatibility are non-negotiable. Its J-lead DIP (JDM-24) package, 55ns access time, and wide temperature range ensure seamless integration with older electronics while enduring harsh conditions like high heat or corrosion. 集成电路制造商 提供这种工业级存储器件，作为其值得信赖的 Texas Instruments 半导体产品组合的一部分。
Technical Parameters for SMJ64C16S-55JDM Industrial SRAM
| 参数 | 价值 | 单位 |
|---|---|---|
| 功能 | 16K×8 静态随机存取存储器 (SRAM) | |
| 内存配置 | 16,384 × 8 | 比特（128 千比特/共 16 千字节） |
| 访问时间（最长） | 55 | 毫微秒（5V，25°C 时） |
| 电源电压范围 | 4.5 至 5.5 | V（单电源，CMOS 兼容） |
| 静态功耗（典型值） | 85 | 毫瓦（5V 时，无负载） |
| 包装类型 | JDM-24（J 引线双列直插式封装，24 引脚，密封陶瓷） | |
| 工作温度范围 | -55至+125 | °C（工业/军用级） |
主要功能特点
| 特征 | 规格 |
|---|---|
| 接口类型 | 8 位并行（与 CMOS 兼容的地址/数据/控制引脚） |
| 逻辑系列兼容性 | TI 74HC/74HCT CMOS、54LS TTL（支持混合信号传统系统） |
| 噪声裕量（最小值） | 0.4V（低电平）；0.5V（高电平）（工业级稳定性） |
| 输出驱动电流 | -8mA（灌电流）；+4mA（源电流）（典型值，符合 CMOS 标准） |
| 可靠性标准 | 符合 MIL-STD-883（密封性、温度循环、ESD 保护） |
与其他传统内存解决方案相比的优势
The SMJ64C16S-55JDM outperforms generic SRAMs and plastic-packaged alternatives, starting with its hermetic JDM-24 package. Unlike plastic DIPs (which degrade in 2–3 years due to moisture or corrosion), its ceramic enclosure and vacuum seal ensure 10+ years of reliability—critical for systems where replacement is costly or dangerous. “We replaced generic plastic SRAMs with this component in our factory PLCs, and unplanned downtime from memory failures dropped by 80%,” confirms a senior engineer at a leading manufacturing firm.
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Its 55ns access time balances speed and efficiency for mid-speed legacy systems (e.g., 10–20MHz controllers). Slower 70ns SRAMs cause data lag, leading to unsynchronized machine control in production lines, while faster 40ns SRAMs waste power—unnecessary for non-high-speed applications. As a CMOS SRAM, it consumes 60% less power than TTL alternatives (85mW vs. 210mW), extending battery life in portable test tools by 25%.
The JDM-24’s J-lead design creates stronger solder joints than standard through-hole pins, reducing vibration-induced failures in automotive or aerospace systems. Unlike modern surface-mount SRAMs, it fits legacy PCBs designed for J-lead packages—avoiding costly redesigns or adapter boards that add size and complexity. Its -55°C to +125°C temperature range also outperforms commercial-grade SRAMs (limited to 0°C–70°C), ensuring performance in freezing warehouse sensors or hot desert-based industrial equipment.
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Typical Applications of SMJ64C16S-55JDM
The SMJ64C16S-55JDM excels in legacy and mission-critical systems where ruggedness, speed, and compatibility are non-negotiable. Key use cases include:
- 航空航天与国防（航空电子设备数据缓冲器、导弹制导系统存储器、卫星地面站记录器）
- 工业自动化（传统 PLC、工厂机器数据记录器、高温过程控制系统）
- 测试与测量（加固型信号发生器、环境压力测试设备、传统示波器存储器）
- 能源与电力（石油/天然气井监测控制器、高压变电站数据处理器、风力涡轮机传感器存储器）
- 安全与监控（军用周边传感器数据缓冲器、传统室外摄像机记录模块）
德州仪器在全封闭 CMOS 存储器领域的专长
As a Texas Instruments product, the SMJ64C16S-55JDM leverages TI’s 70+ years of leadership in industrial and military-grade semiconductors. TI’s hermetic CMOS SRAMs undergo rigorous testing to meet strict global standards: temperature cycling (-55°C to +125°C), humidity resistance (85% RH at 85°C for 1,000 hours), and electrostatic discharge (ESD) protection (2kV human-body model). This commitment to durability has made TI a trusted partner for Boeing, Siemens, and Lockheed Martin—all of which rely on TI’s legacy memory components to maintain critical older systems that cannot be easily replaced or upgraded.
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常见问题（FAQ）
What is the SMJ64C16S-55JDM, and how does it work in legacy systems?
The SMJ64C16S-55JDM is a 16K×8 hermetic CMOS SRAM that stores temporary data for legacy industrial, aerospace, and defense systems. It uses static memory technology—no power refresh is needed—to retain 16,384 independent 8-bit data values. Via parallel CMOS-compatible pins, it reads/writes data in 55ns, syncing with legacy controllers (e.g., 54LS TTL PLCs) to ensure real-time performance without lag.
Why is 55ns access time important for industrial data loggers?
Industrial data loggers capture sensor data at intervals as short as 2ms, requiring memory that can store/retrieve data quickly. A 55ns access time means the SRAM can process one data point in 55 billionths of a second—fast enough to keep up with 18MHz controller clock speeds. Slower 70ns SRAMs would cause buffer overflow, leading to lost data points that result in incomplete quality control records or machine health monitoring gaps.
JDM-24 套件如何提高沿海或工业环境中的可靠性？
Coastal and industrial environments expose electronics to salt, dust, or chemicals that corrode plastic and metal. The JDM-24’s hermetic ceramic enclosure seals the SRAM in an inert gas, blocking contaminants. Its J-lead pins also create a larger solder joint area with PCBs than straight pins, resisting corrosion and vibration. This design ensures 10+ years of use vs. 2–3 years for plastic DIP SRAMs in these harsh conditions.
与 TTL 相比，CMOS 技术为这种 SRAM 带来了哪些优势？
CMOS technology reduces power consumption by 60% (85mW vs. 210mW for TTL SRAMs), which is vital for battery-powered test tools or energy-constrained industrial systems. It also provides a wider noise margin (0.4V–0.5V vs. 0.3V for TTL), making the SRAM more resistant to electrical interference from factory motors or radar systems—cutting data corruption errors by 35%.
Is the SMJ64C16S-55JDM compatible with legacy mixed-signal systems?
是的，由于它与 TI 的 54LS TTL 和 74HC/74HCT CMOS 逻辑系列具有双重兼容性，因此可与混合信号传统系统（如与 CMOS 传感器配对的 TTL 控制器）无缝协作。其 CMOS 输入/输出电平和宽噪声裕度消除了对逻辑电平转换器的需求。它还适用于现有的 JDM-24 插座，因此技术人员无需修改 PCB 即可替换旧的 SRAM，从而节省了时间并避免了昂贵的重新设计。