JAN2N5661P-Transistor-PIND Overview
The JAN2N5661P is a high-performance PNP transistor designed for robust switching and amplification applications in industrial electronics. Built to military standards, this transistor offers reliable operation under harsh conditions, ensuring long-term stability and durability. Ideal for use in circuits requiring precise current control and signal amplification, it supports a collector current up to 600mA and a collector-emitter voltage of 60V. This component is available from IC 製造商, providing engineers and sourcing specialists with a dependable solution for demanding electronic designs.
JAN2N5661P-Transistor-PIND Technical Specifications
| 參數 | 規格 |
|---|---|
| 電晶體類型 | PNP Bipolar Junction Transistor |
| 集電極-發射器電壓 (V執行長) | 60 V |
| Collector-Base Voltage (VCBO) | 60 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| 集電極電流 (IC) | 600 mA |
| Power Dissipation (Ptot) | 625 mW |
| Current Gain (hFE) | 40 to 320 (at IC = 10 mA) |
| Transition Frequency (fT) | 80 MHz |
| 包裝類型 | TO-18 Metal Can |
JAN2N5661P-Transistor-PIND Key Features
- High Current Handling: Supports collector currents up to 600mA, enabling robust switching and amplification in demanding circuits.
- Military-Grade Reliability: Manufactured to JAN (Joint Army-Navy) specifications, ensuring exceptional durability and temperature tolerance for critical applications.
- Wide Voltage Range: Withstand up to 60V between collector and emitter, suitable for medium voltage industrial control systems.
- High Gain Bandwidth: Transition frequency up to 80 MHz allows efficient operation in high-frequency signal processing tasks.
- Metal Can Packaging: TO-18 hermetic package provides superior heat dissipation and environmental protection compared to plastic encapsulated alternatives.
典型應用
- Industrial control circuits requiring reliable PNP transistor switching and amplification under varying environmental conditions.
- Signal amplification stages in analog communication equipment where high gain and low noise are critical.
- Power management circuits in military and aerospace electronics benefiting from rugged construction and stable performance.
- General-purpose discrete transistor applications in test instrumentation, sensor interfaces, and automotive electronics.
JAN2N5661P-Transistor-PIND Advantages vs Typical Alternatives
This PNP transistor stands out due to its military-grade certification and hermetically sealed package, offering superior reliability and environmental resistance compared to typical plastic-encapsulated transistors. Its high current capacity and voltage ratings make it suitable for demanding industrial applications, while the wide gain bandwidth ensures effective operation in high-frequency domains. These advantages provide sourcing specialists and engineers with a robust option that balances performance, durability, and industry compliance.
暢銷產品
JAN2N5661P-Transistor-PIND Brand Info
The JAN2N5661P transistor is produced under stringent military standards commonly associated with the JAN (Joint Army-Navy) designation, which indicates compliance with rigorous quality and performance criteria. This device is typically manufactured by established semiconductor companies specializing in defense-grade components. These manufacturers ensure the transistor meets specification limits for temperature range, vibration, and electrical parameters, making it suitable for aerospace, military, and high-reliability industrial applications. The metal TO-18 package further underscores the focus on durability and long-term stability in harsh environments.
常見問題
What is the maximum collector current supported by this PNP transistor?
The maximum collector current for this transistor is 600 milliamps, supporting moderate power switching and amplification tasks within its rated limits.
精選產品
What package type is used for the JAN2N5661P transistor?
This device comes in a TO-18 metal can package, which provides excellent thermal conduction and hermetic sealing for enhanced reliability in
